Strained graphene and molecular adsorption on boron nitride

24 May 2017
Professor Peter Beton, University Of Nottingham

Graphene can be grown by molecular beam epitaxy on boron nitride and exhibits complex and highly anisotropic strain fields which are investigated using AFM and Raman spectroscopy.

Post-growth strain relief is facilitated by the propagation of highly directional cracks in the graphene which can be initiated using an AFM probe. Growth of boron nitride on graphite will also be discussed together with molecular adsorption experiments on boron nitride and black phosphorus.